Taiwan Semiconductor TSC966CW RPG BJTs - バイポーラトランジスタ 600V、0.3A、NPNバイポーラトランジスタ

Technology: Si

Configuration: Single

Mounting Style: SMD/SMT

Moisture Sensitive: Yes

Transistor Polarity: NPN

Pd - Power Dissipation: 1 W

Gain Bandwidth Product fT: 50 MHz

Emitter- Base Voltage VEBO: 7 V

Collector- Base Voltage VCBO: 600 V

Maximum DC Collector Current: 300 mA

Maximum Operating Temperature: + 150 C

Collector- Emitter Voltage VCEO Max: 400 V

Collector-Emitter Saturation Voltage: 500 mV