Taiwan Semiconductor TSM2NB60CH C5G MOSFETs 600V、2A、シングルNチャネルパワーMOSFET

Fall Time: 12.4 ns

Rise Time: 9.8 ns

Technology: Si

Unit Weight: 340 mg

Channel Mode: Enhancement

REACH - SVHC: Details

Configuration: Single

Mounting Style: Through Hole

Transistor Type: 1 N-Channel

Qg - Gate Charge: 9.4 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 44 W

Vgs - Gate-Source Voltage: - 30 V, + 30 V

Typical Turn-On Delay Time: 9.1 ns

Typical Turn-Off Delay Time: 17.4 ns

Id - Continuous Drain Current: 2 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 1.5 S

Rds On - Drain-Source Resistance: 3.9 Ohms

Vds - Drain-Source Breakdown Voltage: 600 V

Vgs th - Gate-Source Threshold Voltage: 2.5 V