Taiwan Semiconductor TSM4936DCS RLG MOSFETs 30V、5.9A、デュアルNチャネルパワーMOSFET

Fall Time: 3.5 ns

Rise Time: 16.5 ns

Technology: Si

Unit Weight: 83 mg

Channel Mode: Enhancement

Configuration: Dual

Mounting Style: SMD/SMT

Transistor Type: 2 N-Channel

Qg - Gate Charge: 13 nC

Moisture Sensitive: Yes

Number of Channels: 2 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 3 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 9.1 ns

Typical Turn-Off Delay Time: 23 ns

Id - Continuous Drain Current: 5.9 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 32 mOhms

Vds - Drain-Source Breakdown Voltage: 30 V

Vgs th - Gate-Source Threshold Voltage: 1 V