Texas Instruments ADS6149IRGZT DDR低消費電力14ビットADC A 595-ADS6149IRGZR

Width: 7 mm

Height: 0.9 mm

Length: 7 mm

Features: High Performance

Shutdown: No Shutdown

Gain Error: 0.2 %/FSR

Input Type: Differential

Resolution: 14 bit

Output Type: CMOS, LVDS

Unit Weight: 138 mg

Architecture: Pipeline

Sampling Rate: 250 MS/s

Interface Type: Parallel CMOS, Parallel LVDS

Mounting Style: SMD/SMT

Reference Type: External, Internal

Power Consumption: 687 mW

Moisture Sensitive: Yes

Number of Channels: 1 Channel

Number of Converters: 1 Converter

Supply Voltage - Max: 1.9 V, 3.6 V

Supply Voltage - Min: 1.7 V, 3 V

Analog Supply Voltage: 3.3 V

Digital Supply Voltage: 1.8 V

Pd - Power Dissipation: 687 mW

Operating Supply Voltage: 1.7 V to 1.9 V, 3 V to 3.6 V

INL - Integral Nonlinearity: 2 LSB

SNR - Signal to Noise Ratio: 69 dB

Maximum Operating Temperature: + 85 C

Minimum Operating Temperature: - 40 C

DNL - Differential Nonlinearity: 0.4 LSB

ENOB - Effective Number of Bits: 11.4 bit

THD - Total Harmonic Distortion: 73 dBc

SFDR - Spurious Free Dynamic Range: 76 dBc

SINAD - Signal to Noise and Distortion Ratio: 68 dB