Texas Instruments CSD16327Q3 MOSFETs Nチャネル NexFET パワーMOSFET A 595-CSD16327Q3T

Width: 3.3 mm

Height: 1 mm

Length: 3.3 mm

Technology: Si

Unit Weight: 44 mg

Channel Mode: Enhancement

REACH - SVHC: Details

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: 1 N-Channel

Qg - Gate Charge: 6.2 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 3 W

Vgs - Gate-Source Voltage: - 8 V, + 10 V

Id - Continuous Drain Current: 100 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 4.8 mOhms

Vds - Drain-Source Breakdown Voltage: 25 V

Vgs th - Gate-Source Threshold Voltage: 1.2 V