Texas Instruments CSD16570Q5B MOSFETs 25-V Nチャネル NexFE T パワーMOSFET A 595-CSD16570Q5BT

Width: 5 mm

Height: 1 mm

Length: 6 mm

Fall Time: 72 ns

Rise Time: 43 ns

Technology: Si

Unit Weight: 76 mg

Channel Mode: Enhancement

REACH - SVHC: Details

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: 1 N-Channel

Qg - Gate Charge: 192 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 195 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 5 ns

Typical Turn-Off Delay Time: 156 ns

Id - Continuous Drain Current: 100 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 278 S

Rds On - Drain-Source Resistance: 590 uOhms

Vds - Drain-Source Breakdown Voltage: 25 V

Vgs th - Gate-Source Threshold Voltage: 1.1 V