Texas Instruments CSD17313Q2 MOSFETs 30V Nチャネル NexFET パワーMOSFET A 595-CSD17313Q2T

Width: 2 mm

Height: 0.75 mm

Length: 2 mm

Fall Time: 1.3 ns

Rise Time: 3.9 ns

Technology: Si

Unit Weight: 8.700 mg

Channel Mode: Enhancement

Configuration: Single

Mounting Style: SMD/SMT

Development Kit: TMDSCSK388, TMDSCSK8127

Transistor Type: 1 N-Channel Power MOSFET

Qg - Gate Charge: 2.1 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 17 W

Vgs - Gate-Source Voltage: - 8 V, + 8 V

Typical Turn-On Delay Time: 2.8 ns

Typical Turn-Off Delay Time: 4.2 ns

Id - Continuous Drain Current: 5 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 30 mOhms

Vds - Drain-Source Breakdown Voltage: 30 V

Vgs th - Gate-Source Threshold Voltage: 900 mV