Texas Instruments CSD17575Q3 MOSFETs 30V Nチャネル NexFE T パワー MOSFET A 595-CSD17575Q3T

Width: 3.3 mm

Height: 1 mm

Length: 3.3 mm

Fall Time: 3 ns

Rise Time: 10 ns

Technology: Si

Unit Weight: 44.500 mg

Channel Mode: Enhancement

REACH - SVHC: Details

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: 1 N-Channel

Qg - Gate Charge: 23 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 108 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 4 ns

Typical Turn-Off Delay Time: 20 ns

Id - Continuous Drain Current: 182 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 118 S

Rds On - Drain-Source Resistance: 2.3 mOhms

Vds - Drain-Source Breakdown Voltage: 30 V

Vgs th - Gate-Source Threshold Voltage: 1.1 V