Texas Instruments CSD18503Q5A MOSFETs 40V Nチャネル NexFET パワーMOSFET A 595-CSD18503Q5AT

Width: 4.9 mm

Height: 1 mm

Length: 6 mm

Fall Time: 2.6 ns

Rise Time: 8.8 ns

Technology: Si

Unit Weight: 240 mg

Channel Mode: Enhancement

REACH - SVHC: Details

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: 1 N-Channel

Qg - Gate Charge: 27 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 120 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 4.5 ns

Typical Turn-Off Delay Time: 15 ns

Id - Continuous Drain Current: 121 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 100 S

Rds On - Drain-Source Resistance: 4.3 mOhms

Vds - Drain-Source Breakdown Voltage: 40 V

Vgs th - Gate-Source Threshold Voltage: 1.5 V