Texas Instruments CSD18531Q5A MOSFETs 60V Nチャネル NexFET パワーMOSFET A 595-CSD18531Q5AT

Width: 4.9 mm

Height: 1 mm

Length: 6 mm

Fall Time: 2.7 ns

Rise Time: 7.8 ns

Technology: Si

Unit Weight: 87.800 mg

Channel Mode: Enhancement

REACH - SVHC: Details

Configuration: Single

Mounting Style: SMD/SMT

Development Kit: DRV8711EVM

Transistor Type: 1 N-Channel Power MOSFET

Qg - Gate Charge: 36 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 156 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 4.4 ns

Typical Turn-Off Delay Time: 20 ns

Id - Continuous Drain Current: 100 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 4.6 mOhms

Vds - Drain-Source Breakdown Voltage: 60 V

Vgs th - Gate-Source Threshold Voltage: 1.5 V