Texas Instruments CSD18533Q5AT MOSFETs 60V Nチャネル NexFET パワーMOSFET A 595-CSD18533Q5A

Width: 4.9 mm

Height: 1 mm

Length: 6 mm

Fall Time: 2 ns

Rise Time: 5.5 ns

Technology: Si

Unit Weight: 24 mg

Channel Mode: Enhancement

REACH - SVHC: Details

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: 1 N-Channel

Qg - Gate Charge: 29 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 116 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 5.2 ns

Typical Turn-Off Delay Time: 15 ns

Id - Continuous Drain Current: 100 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 6.5 mOhms

Vds - Drain-Source Breakdown Voltage: 60 V

Vgs th - Gate-Source Threshold Voltage: 1.5 V