Texas Instruments CSD87351Q5D 同期バックスMOSFETドライバー Synch Buck NexFETパワーブロック

Width: 5 mm

Height: 1.5 mm

Length: 6 mm

Fall Time: 2.1 ns

Rise Time: 16 ns

Technology: Si

Unit Weight: 161.300 mg

Channel Mode: Enhancement

REACH - SVHC: Details

Configuration: Dual

Mounting Style: SMD/SMT

Transistor Type: 2 N-Channel

Qg - Gate Charge: 5.9 nC, 17 nC

Number of Channels: 2 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 12 W

Vgs - Gate-Source Voltage: - 8 V, + 10 V

Id - Continuous Drain Current: 32 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 7.4 mOhms, 1.6 mOhms

Vds - Drain-Source Breakdown Voltage: 30 V

Vgs th - Gate-Source Threshold Voltage: 2.1 V, 1.15 V