Texas Instruments TPS1101DR PMOSスイッチ 単一Pチャネル増強型MOSFET A 595-TPS1101D

Width: 3.9 mm

Height: 1.75 mm

Length: 4.9 mm

Fall Time: 5.5 ns

Rise Time: 5.5 ns

Technology: Si

Unit Weight: 74 mg

Channel Mode: Enhancement

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: 1 P-Channel

Qg - Gate Charge: 11.25 nC

Number of Channels: 1 Channel

Transistor Polarity: P-Channel

Pd - Power Dissipation: 791 mW

Vgs - Gate-Source Voltage: - 15 V, + 2 V

Typical Turn-On Delay Time: 6.5 ns

Typical Turn-Off Delay Time: 19 ns

Id - Continuous Drain Current: 2.3 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 40 C

Forward Transconductance - Min: 4.3 S

Rds On - Drain-Source Resistance: 90 mOhms

Vds - Drain-Source Breakdown Voltage: 15 V

Vgs th - Gate-Source Threshold Voltage: 1.5 V