THORLABS APD410A2/M 可変ゲイン、温度補償型 Si アバランシェ フォトディテクタ (200 - 1000 nm, M4 Taps)

Key Specifications(a)

Detector Type: UV-Enhanced Silicon APD

Wavelength Range: 200 - 1000 nm

Output Bandwidth (3 dB)(b): DC - 10 MHz

Active Area Diameter: 0.5 mm

Typical Max Responsivity: 25 A/W @ M = 50(c)

Transimpedance Gain: 250 kV/A (50 Ω) 500 kV/A (High-Z)

Max Conversion Gain(e): 12.4 × 10^6 V / W

M Factor Adjustment Range: 5 - 50 (Continuous)

M Factor Temperature Stability(f): ±2% (Typical); ±3% (Max)

Saturation Power (CW): 0.32 µW @ M = 50(c) 3.20 µW @ M = 5

Minimum NEP(g): 0.09 fW/√Hz

Dimensions (H x Wx D): 2.97" x 2.20" x 1.09"

(a) For a complete list of specifications and responsivity graphs, please see the manual. Data are valid at 23 ± 5 °C and 45% ± 15% relative humidity (non-condensing).

(b) At Maximum Gain Setting

(c) At 600 nm

(d) At 800 nm

(e) At the Peak Responsivity Wavelength

(f) Within the 23 ± 5 °C temperature range.

(g) For more information on how NEP is calculated, please see Thorlabs' Noise Equivalent Power White Paper.

MANUAL: