Toshiba 2SA1162-O,LF BJTs - バイポーラトランジスタ バイアス抵抗内蔵トランジスタ

Technology: Si

Unit Weight: 12 mg

Configuration: Single

Qualification: AEC-Q101

Mounting Style: SMD/SMT

Transistor Polarity: PNP

Pd - Power Dissipation: 150 mW

Gain Bandwidth Product fT: 80 MHz

Emitter- Base Voltage VEBO: 5 V

Collector- Base Voltage VCBO: 50 V

Continuous Collector Current: - 150 mA

Maximum DC Collector Current: 150 mA

Maximum Operating Temperature: + 125 C

Collector- Emitter Voltage VCEO Max: 50 V

Collector-Emitter Saturation Voltage: 100 mV