Toshiba RN2904,LF(CT デジタルトランジスタ バイアス抵抗 内蔵トランジスタ

Unit Weight: 6 mg

Mounting Style: SMD/SMT

Transistor Polarity: PNP

Pd - Power Dissipation: 200 mW

Typical Input Resistor: 47 kOhms

Typical Resistor Ratio: 1

Emitter- Base Voltage VEBO: - 10 V

Continuous Collector Current: - 100 mA

DC Collector/Base Gain hfe Min: 80

Collector- Emitter Voltage VCEO Max: - 50 V