Toshiba RN49A2,LF(CT デジタルトランジスタバイアス抵抗内蔵トランジスタ、2in1

Unit Weight: 7.500 mg

Configuration: Dual

Mounting Style: SMD/SMT

Transistor Polarity: NPN, PNP

Pd - Power Dissipation: 200 mW

Emitter- Base Voltage VEBO: 10 V, - 5 V

Collector- Base Voltage VCBO: 50 V, - 50 V

Continuous Collector Current: 100 mA

Maximum DC Collector Current: 100 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

DC Collector/Base Gain hfe Min: 80

Collector- Emitter Voltage VCEO Max: 50 V