Vishay General Semiconductor CNY66B トランジスタ出力フォトカプラ 15kV 100-200%CTR 高絶縁 700mil

Fall Time: 2.7 us

Rise Time: 2.4 us

Output Type: NPN Phototransistor

Unit Weight: 1.700 g

Mounting Style: Through Hole

Isolation Voltage: 8200 Vrms

Number of Channels: 1 Channel

If - Forward Current: 75 mA

Vf - Forward Voltage: 1.6 V

Vr - Reverse Voltage: 5 V

Current Transfer Ratio: 100 %

Pd - Power Dissipation: 250 mW

Maximum Collector Current: 50 mA

Current Transfer Ratio - Max: 200 %

Current Transfer Ratio - Min: 100 %

Maximum Operating Temperature: + 85 C

Minimum Operating Temperature: - 55 C

Maximum Collector Emitter Voltage: 32 V

Maximum Collector Emitter Saturation Voltage: 300 mV