Vishay General Semiconductor H11D2 トランジスタ出力フォトカプラ HV フォトトランジスタ

Width: 6.5 mm

Height: 3.81 mm

Length: 8.7 mm

Output Type: NPN Phototransistor

Unit Weight: 400 mg

Configuration: 1 Channel

Mounting Style: Through Hole

Isolation Voltage: 5000 Vrms

Number of Channels: 1 Channel

If - Forward Current: 60 mA

Vf - Forward Voltage: 1.5 V

Vr - Reverse Voltage: 6 V

Current Transfer Ratio: 20 %

Pd - Power Dissipation: 150 mW

Maximum Collector Current: 50 mA

Current Transfer Ratio - Min: 20 %

Maximum Operating Temperature: + 100 C

Minimum Operating Temperature: - 55 C

Maximum Collector Emitter Voltage: 300 V

Maximum Collector Emitter Saturation Voltage: 400 mV