Vishay General Semiconductor ILD615-4 トランジスタ出力フォトカプラ フォトトランジスタ出力 デュアル CTR 160-320%

Width: 6.81 mm

Height: 3.81 mm

Length: 9.91 mm

Fall Time: 15 us

Rise Time: 4.6 us

Output Type: NPN Phototransistor

Unit Weight: 1.430 g

Configuration: 2 Channel

Mounting Style: Through Hole

Isolation Voltage: 4420 Vrms

Number of Channels: 2 Channel

If - Forward Current: 60 mA

Vf - Forward Voltage: 1.3 V

Vr - Reverse Voltage: 6 V

Current Transfer Ratio: 160 %

Pd - Power Dissipation: 400 mW

Maximum Collector Current: 50 mA

Current Transfer Ratio - Max: 320 %

Current Transfer Ratio - Min: 160 %

Maximum Operating Temperature: + 100 C

Minimum Operating Temperature: - 55 C

Maximum Collector Emitter Voltage: 70 V

Collector-Emitter Breakdown Voltage: 70 V

Maximum Collector Emitter Saturation Voltage: 400 mV