Vishay General Semiconductor ILQ1-X007 トランジスタ出力フォトカプラ フォトトランジスタ出力 クアッド CTR > 20%

Width: 6.81 mm

Height: 3.81 mm

Length: 20.07 mm

Fall Time: 7.6 us

Rise Time: 1.2 us

Output Type: NPN Phototransistor

Unit Weight: 1.100 g

Mounting Style: SMD/SMT

Isolation Voltage: 5300 Vrms

Number of Channels: 4 Channel

If - Forward Current: 60 mA

Vf - Forward Voltage: 1.65 V

Vr - Reverse Voltage: 6 V

Current Transfer Ratio: 20 %

Pd - Power Dissipation: 250 mW

Maximum Collector Current: 400 mA

Current Transfer Ratio - Max: 300 %

Current Transfer Ratio - Min: 20 %

Maximum Operating Temperature: + 100 C

Minimum Operating Temperature: - 40 C

Maximum Collector Emitter Voltage: 50 V

Maximum Collector Emitter Saturation Voltage: 400 mV