Vishay General Semiconductor SI8497DB-T2-E1 MOSFETs -30V Vds 12V Vgs マイクロフット 1.5 x 1

Width: 1.56 mm

Height: 0.6 mm

Length: 2.36 mm

Fall Time: 25 ns

Rise Time: 15 ns

Technology: Si

Unit Weight: 128.380 mg

Channel Mode: Enhancement

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: 1 P-Channel

Qg - Gate Charge: 49 nC

Number of Channels: 1 Channel

Transistor Polarity: P-Channel

Pd - Power Dissipation: 13 W

Vgs - Gate-Source Voltage: - 12 V, + 12 V

Typical Turn-On Delay Time: 17 ns

Typical Turn-Off Delay Time: 60 ns

Id - Continuous Drain Current: 13 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 10 S

Rds On - Drain-Source Resistance: 43 mOhms

Vds - Drain-Source Breakdown Voltage: 30 V

Vgs th - Gate-Source Threshold Voltage: 1.1 V