Vishay General Semiconductor SI8499DB-T2-E1 MOSFETs -20V Vds 12V Vgs マイクロフット 1.5 x 1

Fall Time: 30 ns

Rise Time: 25 ns

Technology: Si

Unit Weight: 128.380 mg

Channel Mode: Enhancement

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: 1 P-Channel

Qg - Gate Charge: 30 nC

Number of Channels: 1 Channel

Transistor Polarity: P-Channel

Pd - Power Dissipation: 13 W

Vgs - Gate-Source Voltage: - 12 V, + 12 V

Typical Turn-On Delay Time: 20 ns

Typical Turn-Off Delay Time: 50 ns

Id - Continuous Drain Current: 16 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 10 S

Rds On - Drain-Source Resistance: 26 mOhms

Vds - Drain-Source Breakdown Voltage: 20 V

Vgs th - Gate-Source Threshold Voltage: 1.3 V