Vishay General Semiconductor TCET1109G トランジスタ出力フォトカプラ フォトトランジスタ出力 単一 CTR 200-400%

Width: 6.3 mm

Height: 3.6 mm

Length: 4.75 mm

Fall Time: 4.7 us

Rise Time: 3 us

Output Type: NPN Phototransistor

Unit Weight: 260 mg

Configuration: 1 Channel

Mounting Style: Through Hole

Isolation Voltage: 5000 Vrms

Number of Channels: 1 Channel

If - Forward Current: 60 mA

Vf - Forward Voltage: 1.6 V

Vr - Reverse Voltage: 6 V

Current Transfer Ratio: 200 %

Pd - Power Dissipation: 265 mW

Maximum Collector Current: 50 mA

Current Transfer Ratio - Max: 400 %

Current Transfer Ratio - Min: 200 %

Maximum Operating Temperature: + 100 C

Minimum Operating Temperature: - 40 C

Maximum Collector Emitter Voltage: 70 V

Maximum Collector Emitter Saturation Voltage: 300 mV