Vishay General Semiconductor TCET4600G トランジスタ出力フォトカプラ フォトトランジスタ出力 クアッド CTR > 20%

Width: 6.3 mm

Height: 3.6 mm

Length: 19.7 mm

Fall Time: 4.7 us

Rise Time: 3 us

Output Type: NPN Phototransistor

Unit Weight: 1.100 g

Configuration: 4 Channel

Mounting Style: Through Hole

Isolation Voltage: 5300 Vrms

Number of Channels: 4 Channel

If - Forward Current: 60 mA

Vf - Forward Voltage: 1.6 V

Vr - Reverse Voltage: 6 V

Current Transfer Ratio: 20 %

Pd - Power Dissipation: 250 mW

Maximum Collector Current: 50 mA

Current Transfer Ratio - Max: 300 %

Current Transfer Ratio - Min: 20 %

Maximum Operating Temperature: + 100 C

Minimum Operating Temperature: - 55 C

Maximum Collector Emitter Voltage: 70 V

Maximum Collector Emitter Saturation Voltage: 300 mV