Vishay General Semiconductor VO617A-7X016 トランジスター出力フォトカプラ DIP-4 CPLR 80-160% CTR VDE

Fall Time: 15 us

Rise Time: 4.6 us

Output Type: NPN Phototransistor

Unit Weight: 1 g

Mounting Style: Through Hole

Isolation Voltage: 5300 Vrms

Number of Channels: 1 Channel

If - Forward Current: 60 mA

Vf - Forward Voltage: 1.65 V

Vr - Reverse Voltage: 6 V

Current Transfer Ratio: 80 %

Pd - Power Dissipation: 200 mW

Maximum Collector Current: 50 mA

Current Transfer Ratio - Max: 160 %

Current Transfer Ratio - Min: 80 %

Maximum Operating Temperature: + 110 C

Minimum Operating Temperature: - 55 C

Maximum Collector Emitter Voltage: 80 V

Maximum Collector Emitter Saturation Voltage: 400 mV