Vishay General Semiconductor VOM617A-1T トランジスタ出力フォトカプラ フォトトランジスタ出力 CTR 40-80% 5mA

Width: 3.85 mm

Height: 2 mm

Length: 4.4 mm

Fall Time: 12 us

Rise Time: 7 us

Output Type: NPN Phototransistor

Unit Weight: 80 mg

Mounting Style: SMD/SMT

Isolation Voltage: 3750 Vrms

Number of Channels: 1 Channel

If - Forward Current: 5 mA

Vf - Forward Voltage: 1.6 V

Vr - Reverse Voltage: 6 V

Current Transfer Ratio: 40 % to 80 %

Pd - Power Dissipation: 170 mW

Maximum Collector Current: 100 mA

Current Transfer Ratio - Max: 80 %

Current Transfer Ratio - Min: 40 %

Maximum Operating Temperature: + 110 C

Minimum Operating Temperature: - 55 C

Maximum Collector Emitter Voltage: 80 V

Collector-Emitter Breakdown Voltage: 80 V

Maximum Collector Emitter Saturation Voltage: 400 mV