Vishay General Semiconductor VOMA617A-8X001T トランジスタ出力フォトカプラ 80V Vceo; 3750 VRMS SOP-4; 130 CTR

Fall Time: 6.2 us

Rise Time: 1.1 us

Output Type: NPN Phototransistor

Unit Weight: 80 mg

Configuration: 1 Channel

Qualification: AEC-Q101

Mounting Style: SMD/SMT

Isolation Voltage: 3750 Vrms

Moisture Sensitive: Yes

Number of Channels: 1 Channel

If - Forward Current: 20 mA

Vf - Forward Voltage: 1.33 V

Vr - Reverse Voltage: 5 V

Current Transfer Ratio: 130 % to 260 %

Pd - Power Dissipation: 180 mW

Maximum Collector Current: 50 mA

Current Transfer Ratio - Max: 260 %

Current Transfer Ratio - Min: 130 %

Maximum Operating Temperature: + 110 C

Minimum Operating Temperature: - 40 C

Maximum Collector Emitter Voltage: 80 V

Maximum Collector Emitter Saturation Voltage: 400 mV