Vishay Siliconix SI2314EDS-T1-E3 MOSFETs SOT23 N チャンネル 20V

Fall Time: 5.9 us

Rise Time: 1.4 us

Technology: Si

Unit Weight: 8 mg

Channel Mode: Enhancement

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: 1 N-Channel

Qg - Gate Charge: 11 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 750 mW

Vgs - Gate-Source Voltage: - 12 V, + 12 V

Typical Turn-On Delay Time: 0.53 us

Typical Turn-Off Delay Time: 13.5 us

Id - Continuous Drain Current: 3.77 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 40 S

Rds On - Drain-Source Resistance: 33 mOhms

Vds - Drain-Source Breakdown Voltage: 20 V

Vgs th - Gate-Source Threshold Voltage: 950 mV