WeEn Semiconductors BUJ403A/DG,127 BJTs - バイポーラトランジスタ NPN パワートランジスタ

Technology: Si

Unit Weight: 6 g

Configuration: Single

Mounting Style: Through Hole

Transistor Polarity: NPN

Pd - Power Dissipation: 100 W

DC Current Gain hFE Max: 47

Collector- Base Voltage VCBO: 1.2 kV

Maximum DC Collector Current: 6 A

Maximum Operating Temperature: + 150 C

DC Collector/Base Gain hfe Min: 13

Collector- Emitter Voltage VCEO Max: 550 V

Collector-Emitter Saturation Voltage: 150 mV