WeEn Semiconductors BUJD105AD,118 BJTs - バイポーラトランジスタ TRANS NPN 700V 8A

Width: 6.22 mm

Height: 2.38 mm

Length: 6.73 mm

Technology: Si

Unit Weight: 260.400 mg

REACH - SVHC: Details

Configuration: Single

Mounting Style: SMD/SMT

Transistor Polarity: NPN

Pd - Power Dissipation: 80 W

DC Current Gain hFE Max: 36

Collector- Base Voltage VCBO: 700 V

Maximum DC Collector Current: 8 A

Maximum Operating Temperature: + 150 C

DC Collector/Base Gain hfe Min: 8

Collector- Emitter Voltage VCEO Max: 400 V

Collector-Emitter Saturation Voltage: 350 mV