WeEn Semiconductors PHD13005,127 BJTs - バイポーラトランジスタ トランジスタ NPN BIPO 700V

Technology: Si

Unit Weight: 1.800 g

REACH - SVHC: Details

Configuration: Single

Mounting Style: Through Hole

Transistor Polarity: NPN

Pd - Power Dissipation: 75 W

DC Current Gain hFE Max: 40

Collector- Base Voltage VCBO: 700 V

Maximum DC Collector Current: 4 A

Maximum Operating Temperature: + 150 C

DC Collector/Base Gain hfe Min: 10

Collector- Emitter Voltage VCEO Max: 400 V

Collector-Emitter Saturation Voltage: 300 mV