WeEn Semiconductors PHE13005X/01,127 BJTs - バイポーラトランジスタ シリコン拡散パワートランジスタ

Technology: Si

Unit Weight: 2 g

Configuration: Single

Mounting Style: Through Hole

Transistor Polarity: NPN

Pd - Power Dissipation: 26 W

DC Current Gain hFE Max: 40

Collector- Base Voltage VCBO: 700 V

Maximum DC Collector Current: 4 A

Maximum Operating Temperature: + 150 C

DC Collector/Base Gain hfe Min: 10

Collector- Emitter Voltage VCEO Max: 400 V

Collector-Emitter Saturation Voltage: 300 mV