WeEn Semiconductors PHE13009/DG,127 BJTs - バイポーラトランジスタ NPN パワートランジスタ

Technology: Si

Unit Weight: 6 g

REACH - SVHC: Details

Configuration: Single

Mounting Style: Through Hole

Transistor Polarity: NPN

Pd - Power Dissipation: 80 W

DC Current Gain hFE Max: 40

Collector- Base Voltage VCBO: 700 V

Maximum DC Collector Current: 12 A

Maximum Operating Temperature: + 150 C

DC Collector/Base Gain hfe Min: 8

Collector- Emitter Voltage VCEO Max: 400 V

Collector-Emitter Saturation Voltage: 320 mV