WeEn Semiconductors WMSC008H12B1P6T SiC MOSFETモジュール WMSC008H12B1P/WeEnPACK-B1/標準マーキング*トレーパック、EPEまたはブリスター

Width: 33.8 mm

Height: 11.95 mm

Length: 48 mm

Fall Time: 55 ns

Rise Time: 40 ns

Technology: SiC

Mounting Style: Screw Mount

Number of Channels: 2 Channel

Transistor Polarity: N-Channel

If - Forward Current: 61 A

Pd - Power Dissipation: 244 W

Vgs - Gate-Source Voltage: - 4 V, + 18 V

Typical Turn-On Delay Time: 60 ns

Typical Turn-Off Delay Time: 150 ns

Id - Continuous Drain Current: 153 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 40 C

Rds On - Drain-Source Resistance: 6.5 mOhms

Vds - Drain-Source Breakdown Voltage: 1.2 kV

Vgs th - Gate-Source Threshold Voltage: 3.5 V