Fairchild FGA50S110P IGBT Transistors 1100 V, 50 A Shorted-anode IGBT
生産者: Fairchild Model: FGA50S110P - 連絡先
Technology: Si
Unit Weight: 6.401 g
REACH - SVHC: Details
Configuration: Single
Mounting Style: Through Hole
Pd - Power Dissipation: 300 W
Gate-Emitter Leakage Current: 500 nA
Maximum Gate Emitter Voltage: - 25 V, 25 V
Maximum Operating Temperature: + 175 C
Minimum Operating Temperature: - 55 C
Collector- Emitter Voltage VCEO Max: 1.1 kV
Collector-Emitter Saturation Voltage: 2.06 V
Continuous Collector Current at 25 C: 50 A
- 良質な取り決め
- オリジナル保証
- 宅配便
- 買い取り簡単化
