Vishay General Semiconductor IRFR320TRPBF-BE3 MOSFETs TO252 400V 3.1A N-CH MOSFET
生産者: Vishay General Semiconductor Model: IRFR320TRPBF-BE3 - 連絡先
Fall Time: 13 ns
Rise Time: 14 ns
Technology: Si
Channel Mode: Enhancement
REACH - SVHC: Details
Mounting Style: SMD/SMT
Transistor Type: 1 N-Channel
Qg - Gate Charge: 20 nC
Number of Channels: 1 Channel
Transistor Polarity: N-Channel
Pd - Power Dissipation: 42 W
Vgs - Gate-Source Voltage: - 20 V, + 20 V
Typical Turn-On Delay Time: 10 ns
Typical Turn-Off Delay Time: 30 ns
Id - Continuous Drain Current: 3.1 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Forward Transconductance - Min: 1.7 S
Rds On - Drain-Source Resistance: 1.8 Ohms
Vds - Drain-Source Breakdown Voltage: 400 V
Vgs th - Gate-Source Threshold Voltage: 2 V
- 良質な取り決め
- オリジナル保証
- 宅配便
- 買い取り簡単化
