Vishay General Semiconductor SI1029X-T1-GE3 MOSFETs 60V Vds 20V Vgs SC89-6 N&P PAIR

Width: 1.2 mm

Height: 0.6 mm

Length: 1.66 mm

Technology: Si

Unit Weight: 32 mg

Channel Mode: Enhancement

Configuration: Dual

Mounting Style: SMD/SMT

Transistor Type: 1 N-Channel, 1 P-Channel

Qg - Gate Charge: 750 pC, 1.7 nC

Number of Channels: 2 Channel

Transistor Polarity: N-Channel, P-Channel

Pd - Power Dissipation: 280 mW

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 15 ns, 20 ns

Typical Turn-Off Delay Time: 20 ns, 35 ns

Id - Continuous Drain Current: 500 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 200 mS, 100 mS

Rds On - Drain-Source Resistance: 1.4 Ohms, 4 Ohms

Vds - Drain-Source Breakdown Voltage: 60 V

Vgs th - Gate-Source Threshold Voltage: 1 V