
Vishay General Semiconductor SI3483CDV-T1-GE3 MOSFETs -30V Vds 20V Vgs TSOP-6
生産者: Vishay General Semiconductor Model: SI3483CDV-T1-GE3 - 連絡先
Fall Time: 15 ns
Rise Time: 135 ns
Technology: Si
Unit Weight: 20 mg
Channel Mode: Enhancement
Configuration: Single
Mounting Style: SMD/SMT
Transistor Type: 1 P-Channel
Qg - Gate Charge: 33 nC
Number of Channels: 1 Channel
Transistor Polarity: P-Channel
Pd - Power Dissipation: 4.2 W
Vgs - Gate-Source Voltage: - 20 V, + 20 V
Typical Turn-On Delay Time: 45 ns
Typical Turn-Off Delay Time: 30 ns
Id - Continuous Drain Current: 8 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Rds On - Drain-Source Resistance: 34 mOhms
Vds - Drain-Source Breakdown Voltage: 30 V
Vgs th - Gate-Source Threshold Voltage: 1 V
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