Advanced Semiconductor, Inc. BLX15 RF 바이폴라 파워 RF 트랜지스터

Technology: Si

Mounting Style: Through Hole

Transistor Type: Bipolar Power

Operating Frequency: 28 MHz

Transistor Polarity: NPN

Pd - Power Dissipation: 233 W

Emitter- Base Voltage VEBO: 4 V

Continuous Collector Current: 10 A

Maximum DC Collector Current: 20 A

Maximum Operating Temperature: + 200 C

Minimum Operating Temperature: - 55 C

DC Collector/Base Gain hfe Min: 15

Collector- Emitter Voltage VCEO Max: 55 V