Advanced Semiconductor, Inc. MRF5174 RF 바이폴라 파워 RF 트랜지스터

Technology: Si

Mounting Style: Through Hole

Transistor Type: Bipolar Power

Operating Frequency: 400 MHz

Transistor Polarity: NPN

Pd - Power Dissipation: 8.75 W

Emitter- Base Voltage VEBO: 3.5 V

Continuous Collector Current: 500 mA

Maximum Operating Temperature: + 200 C

Minimum Operating Temperature: - 55 C

DC Collector/Base Gain hfe Min: 20

Collector- Emitter Voltage VCEO Max: 28 V