Alliance Memory M29F400FB55M3F2 NOR 플래시 4Mbit 512kWords/256kWords 8비트/16비트 병렬 5V 55ns 44핀 SOIC T/R

Density: 4 Mbit

Package: 44SOIC

Mounting: Surface Mount

Rad Hard: No

Cell Type: NOR

Pin Count: 44

Boot Block: Yes

Access Time: 55 ns

No. of Pins: 44

Timing Type: Asynchronous

Architecture: Sectored

Organization: 512K x 8|256K x 16

Interface Type: Parallel

Memory Density: 4 Mbit

OE Access Time: 20 ns

Number of Words: 512|256 kWords

Program Current: 30 mA

Screening Level: Automotive

Supplier Package: SOIC

Address Bus Width: 20 Bit

Block Organization: Asymmetrical

Maximum Erase Time: 30/Chip s

Product Dimensions: 28.5 x 12.6 x 2.69 mm

Supply Voltage Max: 5.5 V

Supply Voltage Min: 4.5 V

Supply Voltage Nom: 5 V

Programming Voltage: 4.5 to 5.5 V

Operating Temperature: -40 to 125 °C

Location Of Boot Block: Bottom

Number of Bits per Word: 8|16 Bit

Maximum Programming Time: 15000/Chip ms

Maximum Operating Current: 20 mA

Operating Temperature Max: 125 °C

Operating Temperature Min: -40 °C

Maximum Random Access Time: 55 ns

Simultaneous Read/Write Support: No

Maximum Operating Supply Voltage: 5.5 V

Minimum Operating Supply Voltage: 4.5 V

Typical Operating Supply Voltage: 5 V

Erase Suspend/Resume Modes Support: Yes

Datasheet