CEL CE7613M4 RF JFET 트랜지스터 RF 저잡음 FET 4핀 플랫리드

Gain: 14.1 dB

Technology: Si

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: pHEMT

NF - Noise Figure: 0.35 dB

Operating Frequency: 12 GHz

Pd - Power Dissipation: 125 mW

Gate-Source Cutoff Voltage: 400 mV

Id - Continuous Drain Current: 10 mA

Maximum Operating Temperature: + 125 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 51.8 mS

Vgs - Gate-Source Breakdown Voltage: - 400 mV

Vds - Drain-Source Breakdown Voltage: 2 V