Central Semiconductor 2N1131B TIN/LEAD BJTs - 바이폴라 트랜지스터 PNP 50Vcbo 35Vceo 5.0Vebo 45pF

Technology: Si

Configuration: Single

Mounting Style: Through Hole

Transistor Polarity: PNP

DC Current Gain hFE Max: 45 at 150 mA, 10 V

Gain Bandwidth Product fT: 50 MHz

Emitter- Base Voltage VEBO: 5 V

Collector- Base Voltage VCBO: 50 V

DC Collector/Base Gain hfe Min: 20 at 150 mA, 10 V

Collector- Emitter Voltage VCEO Max: 35 V

Collector-Emitter Saturation Voltage: 1.5 V