Central Semiconductor 2N3799 PBFREE BJTs - 바이폴라 트랜지스터 저잡음 증폭기

Technology: Si

Unit Weight: 312.400 mg

Configuration: Single

Mounting Style: Through Hole

Transistor Polarity: PNP

Pd - Power Dissipation: 360 mW

DC Current Gain hFE Max: 900

Gain Bandwidth Product fT: 80 MHz

Emitter- Base Voltage VEBO: 5 V

Collector- Base Voltage VCBO: 60 V

Continuous Collector Current: 50 mA

Maximum DC Collector Current: 50 mA

Maximum Operating Temperature: + 200 C

Minimum Operating Temperature: - 65 C

DC Collector/Base Gain hfe Min: 300

Collector- Emitter Voltage VCEO Max: 60 V

Collector-Emitter Saturation Voltage: 250 mV