Central Semiconductor 2N4032 TIN/LEAD BJTs - 바이폴라 트랜지스터 PNP 60Vcbo 60Vceo 5.0Vebo 20pF

Technology: Si

Configuration: Single

Mounting Style: Through Hole

Transistor Polarity: PNP

DC Current Gain hFE Max: 120

Gain Bandwidth Product fT: 100 MHz

Emitter- Base Voltage VEBO: 5 V

Collector- Base Voltage VCBO: 60 V

DC Collector/Base Gain hfe Min: 40

Collector- Emitter Voltage VCEO Max: 60 V

Collector-Emitter Saturation Voltage: 500 mV