Central Semiconductor 2N5089 PBFREE BJTs - 바이폴라 트랜지스터 NPN Gen Pur SS

Unit Weight: 453.600 mg

Configuration: Single

Mounting Style: Through Hole

Transistor Polarity: NPN

Pd - Power Dissipation: 625 mW

DC Current Gain hFE Max: 1200

Gain Bandwidth Product fT: 50 MHz

Emitter- Base Voltage VEBO: 4.5 V

Collector- Base Voltage VCBO: 30 V

Continuous Collector Current: 50 mA

Maximum DC Collector Current: 50 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 65 C

DC Collector/Base Gain hfe Min: 400

Collector- Emitter Voltage VCEO Max: 25 V

Collector-Emitter Saturation Voltage: 500 mV