Central Semiconductor 2N5226 TIN/LEAD BJTs - 바이폴라 트랜지스터 PNP 25Vcbo 25Vceo 4.0Vebo 8pF

Technology: Si

Configuration: Single

Mounting Style: Through Hole

Transistor Polarity: PNP

Pd - Power Dissipation: 625 mW

DC Current Gain hFE Max: 600

Gain Bandwidth Product fT: 50 MHz

Emitter- Base Voltage VEBO: 4 V

Collector- Base Voltage VCBO: 25 V

Continuous Collector Current: 500 mA

DC Collector/Base Gain hfe Min: 30

Collector- Emitter Voltage VCEO Max: 25 V

Collector-Emitter Saturation Voltage: 800 mV