Central Semiconductor 2N6261 TIN/LEAD BJTs - 바이폴라 트랜지스터 NPN 4.0A 90Vcbo 80Vceo 0.5Vce

Technology: Si

Configuration: Single

Mounting Style: Through Hole

Transistor Polarity: NPN

Pd - Power Dissipation: 50 W

DC Current Gain hFE Max: 100

Gain Bandwidth Product fT: 800 kHz

Collector- Base Voltage VCBO: 90 V

Continuous Collector Current: 4 A

DC Collector/Base Gain hfe Min: 25

Collector- Emitter Voltage VCEO Max: 80 V

Collector-Emitter Saturation Voltage: 1.5 V