Central Semiconductor 2N6432 TIN/LEAD BJTs - 바이폴라 트랜지스터 200Vcbo 200Vceo 6.0Vebo 100mA 500mW

Technology: Si

Configuration: Single

Mounting Style: Through Hole

Transistor Polarity: PNP

Pd - Power Dissipation: 500 mW

DC Current Gain hFE Max: 200 @ 30 mA, 10 V

Emitter- Base Voltage VEBO: 5 V

Collector- Base Voltage VCBO: 200 V

Continuous Collector Current: 500 mA

Maximum Operating Temperature: + 200 C

Minimum Operating Temperature: - 65 C

DC Collector/Base Gain hfe Min: 25 @ 1 mA, 10 V

Collector- Emitter Voltage VCEO Max: 200 V

Collector-Emitter Saturation Voltage: 500 mV